发明名称 |
Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment |
摘要 |
A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first atmosphere including oxygen at a first temperature which is selected to be within a range of 200-600° C., which is lower than the oxidation temperature of the upper electrode. The first thermally treated resultant undergoes a second thermal treatment under a second atmosphere without oxygen at a second temperature which is selected to be within a range of 300-900° C., which is higher than the first temperature.
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申请公布号 |
US2002076878(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010851910 |
申请日期 |
2001.05.09 |
申请人 |
WON SEOK-JUN;LEE YUN-JUNG;PARK SOON-YEON;YOO CHA-YOUNG;HWANG DOO-SUP;CHUNG EUN-AE;KIM WAN-DON |
发明人 |
WON SEOK-JUN;LEE YUN-JUNG;PARK SOON-YEON;YOO CHA-YOUNG;HWANG DOO-SUP;CHUNG EUN-AE;KIM WAN-DON |
分类号 |
H01L27/108;H01L21/02;H01L21/314;H01L21/324;H01L21/8242;(IPC1-7):H01L21/20;H01L21/44;H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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