| 摘要 |
<p>A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact zone is of the opposite dopant type. A specific embodiment of the invention comprises a stack formed from a first contact zone (4) of p-type material, a lightly doped p-type active layer (2), an additional p-layer (20) and a second contact zone (6) of n-type material. The diode may be used as an infrared detector or a negative luminescent source.</p> |
