| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a native oxide layer from being generated before or after a heat treatment process is performed regarding a diffusion barrier layer, by performing processes in a vacuum atmosphere. CONSTITUTION: A wafer is positioned in a direction align chamber of an apparatus for forming a thin film such that the apparatus has a plurality of chambers. A metal interconnection diffusion barrier layer is formed on the wafer in a metal thin film chamber of the apparatus. A heat treatment process is performed in a heat chamber of the apparatus. A metal interconnection thin film is formed on the diffusion barrier layer in the metal thin film chamber of the apparatus.
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