发明名称 |
PROCESSING METHOD AND PROCESSING APPARATUS |
摘要 |
After a thin film is deposited on a treatment surface of a wafer and the wafer is transferred out of a treatment chamber, a contact projection of a clamp is brought into contact with a susceptor to heat the clamp. Next, a wafer is disposed on the susceptor by elevating the clamp when the wafer, on which a thin film is not deposited, is transferred in. Thereafter, the clamp is brought into contact with the wafer and the wafer is stabilized to a predetermined temperature. Thereafter, a thin film is deposited on a treatment surface of the wafer.
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申请公布号 |
WO0249098(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
WO2001JP10959 |
申请日期 |
2001.12.14 |
申请人 |
TOKYO ELECTRON LIMITED;KOJIMA, YASUHIKO;ARIMA, SUSUMU;YAMASAKI, HIDEAKI;KAWANO, YUMIKO |
发明人 |
KOJIMA, YASUHIKO;ARIMA, SUSUMU;YAMASAKI, HIDEAKI;KAWANO, YUMIKO |
分类号 |
C23C14/50;C23C16/458;C23C16/46;H01L21/00;H01L21/205;H01L21/68;H01L21/683;H01L21/687;(IPC1-7):H01L21/68 |
主分类号 |
C23C14/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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