发明名称 Semiconductor device and manufacturing method thereof
摘要 On a copper wiring surface, an oxidation resistive and fluorinated acid resistive layer is formed, and an oxidation resistive copper wiring, enhancement of resistive fluorinated acid nature are achieved. Furthermore, a via-hole connection resistance is reduced, and a clad layer (the CoWP layer) having oxidation resistive and fluorinated acid resistive nature high copper wiring configuration is formed, and cover layer (the CoWP layer) including cobalt and the CoWP layer of reliability, and the CoWP layer is formed by the copper wiring.
申请公布号 US2002074664(A1) 申请公布日期 2002.06.20
申请号 US20010915145 申请日期 2001.07.25
申请人 NOGAMI TAKESHI;KOMAI NAOKI;KITO HIDEYUKI;TAGUCHI MITSURU 发明人 NOGAMI TAKESHI;KOMAI NAOKI;KITO HIDEYUKI;TAGUCHI MITSURU
分类号 H01L23/52;H01L21/28;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L23/52
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