发明名称 |
Process for producing high quality PZT films for ferroelectric memory integrated circuits |
摘要 |
A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.
|
申请公布号 |
US2002074601(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20000742204 |
申请日期 |
2000.12.20 |
申请人 |
FOX GLEN;CHU FAN;EASTEP BRIAN;TAKAMATSU TOMOHIRO;HORII YOSHIMASA;NAKAMURA KO |
发明人 |
FOX GLEN;CHU FAN;EASTEP BRIAN;TAKAMATSU TOMOHIRO;HORII YOSHIMASA;NAKAMURA KO |
分类号 |
H01L27/105;H01L21/02;H01L21/314;H01L21/316;H01L21/8246;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L27/01;H01L21/00;H01L23/58;H01L27/12;H01L31/039;H01L21/20;H01L29/00 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|