ALKALI EARTH METAL OXIDE GATE INSULATORS

摘要

High quality epitaxial layers of stable oxides can be grown overlying compound semiconductor material substrates. The compound semiconductor substrate (101) may be terminated with an atomic layer of gallium, for example (for a gallium arsenide substrate), forming a terminating layer (102). The oxide layer (105) is a layer of monocrystalline alkali earth oxide spaced apart from the compound semiconductor wafer by an oxide template layer (103) overlying the compound semiconductor substrate via the terminating layer. The oxide template layer (103) dissipates strain and permits the growth of a high quality monocrystalline oxide layer. Any lattice mismatch between the monocrystalline oxide layer and the underlying compound semiconductor substrate is decreased by the oxide template layer. The monocrystalline oxide layers can be used as gate dielectric in insulated gate field effect transistors.