发明名称 |
Feldeffekttransistor mit kammartiger Elektrodenstruktur |
摘要 |
<p>A FET has comb-shaped electrode assemblies for source, drain and gate of the FET. Each of the source and drain electrode assemblies has a plurality of electrodes contacting the active region of the FET and formed as a first layer metal laminate, and a bus bar connecting the electrodes together to a corresponding pad and formed as a second layer metal laminate. The gate electrode layer has a plurality of gate electrodes contacting the active layer in Schottky contact, a gate bus bar connecting the gate electrodes together, a gate pad connected to the gate bus bar. The gate bus bar is formed as a first layer metal laminate intersecting the stem portion of the comb-shaped source bus bar. The two-layer metal structure of the FET reduces the number of photolithographic steps and thereby fabrication costs of the FET. <IMAGE></p> |
申请公布号 |
DE69615423(T2) |
申请公布日期 |
2002.06.20 |
申请号 |
DE1996615423T |
申请日期 |
1996.01.26 |
申请人 |
NEC CORP., TOKIO/TOKYO |
发明人 |
KANAMORI, MIKIO;IMAMURA, TAKAFUMI |
分类号 |
H01L29/41;H01L21/285;H01L21/338;H01L23/482;H01L29/417;H01L29/423;H01L29/812;(IPC1-7):H01L29/423 |
主分类号 |
H01L29/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|