| 发明名称 |
Iridium and iridium oxide electrodes used in ferroelectric capacitors |
| 摘要 |
The present invention provides a capacitor having upper and lower electrodes formed of iridium or iridium oxide or combinations thereof. The electrodes are preferably formed using physical vapor deposition. An insulating layer disposed between the electrodes can be a ferroelectric ceramic such as PZT or PLZT.
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| 申请公布号 |
US2002075631(A1) |
申请公布日期 |
2002.06.20 |
| 申请号 |
US20000749262 |
申请日期 |
2000.12.27 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SINGH KAUSHAL KISHORE;ABOOAMERI FARID;SIVARAMAKRISHNAN VISWESWAREN;SAJOTO TALEX;LIM VICENTE;ZHAO JUN |
| 分类号 |
H01L21/316;H01L21/02;H01L21/108;H01L21/203;H01L21/285;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01G4/06 |
主分类号 |
H01L21/316 |
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