SEMICONDUCTOR DEVICE AND PROCESS FOR FORMING THE SAME

摘要

Semiconductor devices and processes for forming the same. The semiconductor device (10) includes field isolation regions (12) within trenches (14) lying within a semiconductor device substrate (11). The trenches (14) include a first trench and a second trench. The device includes a first component region and a second component region. The first component region lies near the first trench, and the second component region lies near the second trench. The semiconductor device includes a feature selected from a group consisting of: (a) a first liner (20) within the first trench (14), and a second liner (36) within the second trench (34), wherein the first liner (20) is significantly thicker than the second liner (36); and (b) the first component region has a first edge with a first radius of curvature near the first trench, and the second component has a second edge with a second radius (R2) of curvature near the second trench (34), wherein the first radius of curvature is significantly greater than the second radius of curvature (R2).