| 摘要 |
PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to improve an operational speed by performing a self alignment silicide processing. CONSTITUTION: A CMOS image sensor comprises a buried photodiode(BPD), a CMOS transistor electrically connected with the buried photodiode(BPD), silicide layers(25) formed on the edge portion of the buried photodiode(BPD) except for the center portion, gate electrodes(16) of the CMOS, and surfaces of diffusion regions implanted with heavily doped dopants, and a sacrificial pattern(200) made of an oxide formed in the center portion of the buried photodiode(BPD) and on a field oxide(14). At this point, the gate electrodes(16) are formed with gate oxides(15) and spacers(21).
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