| 摘要 |
PURPOSE: An interlayer dielectric formation method of semiconductor devices is provided to prevent a degradation of an HQS(Hydrogen silsesquioxane) due to attack of moistures. CONSTITUTION: Metal interconnections(1) are formed on a semiconductor substrate(10). A liner insulator(2) made of PECVD(Plasma Enhanced CVD) oxide of SiH4 group is deposited on the resultant structure. A first HQS layer(3) is coated on the liner insulator(2) and cured at the temperature of 450-700°C. A second HQS layer(4) is coated on the first HQS layer(3). Then, the second HQS layer(4) is cured at the temperature of 350-400°C. The method further include baking steps of the first and second HQS layers.
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