| 摘要 |
<p>An integrated circuit test structure comprises a potential divider (1, 2) and an array of test circuits. Each test circuit comprises series-connected chains (A1, A2) of integrated circuit connections between test voltage lines (3, 4). Each test circuit also comprises a comparator in the form of a MOSFET (Q1) having a gate connected to the centre point of the chain (A1, A2) and a source connected to the output of the potential divider (1, 2). The drain of the transistor (Q1) is connected to an input (6i) for a bias voltage. <IMAGE></p> |
