| 摘要 |
PURPOSE: An apparatus and a method for forming a titanium nitride are provided to improve a deposition speed and to minimize chlorine-contained residues by using an ALCVD(Atomic Layer CVD) having a UV(Ultra-Violet) lamp. CONSTITUTION: The ALCVD apparatus comprises a reaction chamber(40), a plurality of supply lines(10,20,30), and an exhaust outlet(50). The reaction chamber(40) further includes a UV lamp(41) and a heater(42) and loads a semiconductor substrate(1). The first supply line(10) is supplied a titanium source to the reaction chamber, the second supply line(20) is supplied a purge gas to the reaction chamber, and the third supply line(30) is supplied a nitrogen source to the reaction chamber. The third supply line(30) further includes a UV lamp(31).
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