| 摘要 |
PURPOSE: A metal interconnection formation method of semiconductor devices is provided to prevent voids by forming titanium silicide film using an amorphous silicon layer. CONSTITUTION: Gate lines are formed by sequentially forming and patterning a gate oxide(101), a tungsten silicide(106), an amorphous silicon layer(109) and a nitride layer(114) on a semiconductor substrate(100). After depositing an interlayer dielectric(120) on the resultant structure, bit line contacts are formed by selectively etching the interlayer dielectric. A titanium film(130), a first titanium nitride(133) and a second titanium nitride(137) are sequentially formed on the resultant structure. At this time, a titanium silicide(140) is formed at bottom of the bit line contacts by contacting between the titanium and the amorphous silicon.
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