发明名称 |
Surge protective semiconductor device and method of manufacturing the same |
摘要 |
<p>In order to provide a reliable surge protective component with a straightforward manufacturing process, first and second buried layers are diffused over the entire inside surfaces of a semiconductor substrate, and first and second base layers are then diffused over the entire inside surfaces of the first and second buried layers. First and second emitter layers are then partially diffused at the inside of the first and second base layers. The peripheries of the first and second emitter layers are then surrounded by first and second moats, the bottoms of which reach the first and second buried layers. A PN junction formed between the first and second base layers and first and second buried layers is then simply a planar junction. <IMAGE></p> |
申请公布号 |
EP1215734(A2) |
申请公布日期 |
2002.06.19 |
申请号 |
EP20010129517 |
申请日期 |
2001.12.11 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
SUZUKI, MINORU;YOSHIDA, SUSUMU |
分类号 |
H01L29/74;H01L21/329;H01L21/822;H01L27/04;H01L29/87;(IPC1-7):H01L29/87;H01L29/747;H01L21/332 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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