| 摘要 |
PURPOSE: A fabrication method of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to simplify processes and to improve a characteristic by preventing a penetration of an implanted ion to a channel region when implanting ions with high energy. CONSTITUTION: A P-epitaxial layer(202), a field oxide(Fox)(203), a polysilicon layer, and an oxide are sequentially formed on a P+ silicon substrate(201). A gate pattern(205a,204a) is formed by selectively etching the oxide and the polysilicon layer. Then, a photoresist pattern(206) is etched to expose the P-epitaxial layer(202) and a defined region of the gate pattern. Then, an N-type dopant doped layer(208) is formed by implanting doped ions with high energy using the photoresist pattern(206) as a mask. Because the oxide having a thickness of 1000-1500 angstrom is formed, an ion penetration is prevented to a channel.
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