发明名称 IMAGE SENSOR CAPABLE OF IMPROVING LIGHT SENSITIVITY AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: An image sensor capable of improving light sensitivity and a manufacturing method thereof are provided to prevent characteristic light sensitivity from being deteriorated when OCL is formed. CONSTITUTION: A transparent positive photoresist film is coated on the entire structure having a color filter array therein. A forth baking process is performed at a temperature 10°C and 150°C for 1-3 minutes in a hot plate type oven. The temperature is lower than that in first to third baking processes. On a condition that the first-third color filters(R,G,B) and the positive photoresist film are etched at the same rate, an RIE(reactive ion etching) process is performed until first to third color filters(R,G,B) are flattened. Other positive photo resist films beyond the color filter array region are removed by using an O2 plasma treatment. Micro lenses in contact with the flattened first to third color filters(R,G,B) are formed as a photoresist film and a fifth hard-baking process is performed.
申请公布号 KR20020045164(A) 申请公布日期 2002.06.19
申请号 KR20000074494 申请日期 2000.12.08
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, JUN
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项
地址
您可能感兴趣的专利