| 摘要 |
PURPOSE: A formation method of a gate electrode of semiconductor device is provided to improve a reliability of a gate oxide by restraining a contamination of a thick gate oxide and to easily control the thickness of the thick gate oxide by sequentially forming a polysilicon after an oxidation of the thick gate oxide. CONSTITUTION: After forming isolation layers(22) on a substrate(21), a thick gate oxide(25) as a second gate oxide, a first doped polysilicon, a tungsten silicide(27), a gate capping layer(28) are sequentially formed on the resultant structure, thereby easily controlling the thickness of the thick gate oxide(25). After etching the gate capping layer(28), the tungsten silicide(27), the first doped polysilicon, the thick gate oxide(25) in a logic region(24), a thin gate oxide(29) as a second gate oxide and a first undoped polysilicon(30) are sequentially deposited on the entire surface of the resultant structure.
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