METHOD FOR OPTIMIZING CLEANING PROCESS OF CVD APPARATUS

摘要

PURPOSE: A method for optimizing a cleaning process of a CVD(Chemical Vapor Deposition) method is provided to optimize the cleaning process by using a gas such as ClF3 or NF3. CONSTITUTION: A semiconductor wafer is loaded in a quartz tube. The first cleaning process is performed and evaluated by supplying a cleaning gas into the quartz tube with a constant pressure and a constant temperature. A pure quartz sample is loaded in the quartz tube. The second cleaning process is performed and evaluated by supplying the cleaning gas into the quartz tube with the constant pressure and the constant temperature. An optimum condition for the cleaning process is determined according to the first evaluation process and the second evaluation process. The semiconductor wafer is loaded in the quartz tube. An ending point of the cleaning process is determined under the optimum cleaning condition.