METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING SIMPLIFIED MANUFACTURING PROCESSES

摘要

PURPOSE: A method for manufacturing a semiconductor device having simplified manufacturing processes is provided to minimize an operation deviation and to improve a through-put through skips of peripheral processes by one-step photolithography so as to form a bit line poly-contact(DC) and a storage poly-contact(BC). CONSTITUTION: An interlayer dielectric(20), a nitride(22) as an etch stopper, and an oxide(24) are sequentially deposited on a substrate(10) having a plurality of transistors. One-step photolithography and an etching processes are performed to form a bit line poly-contact(DC) and a storage poly-contact(BC) holes using a reticle having the bit line poly-contact(DC) and the storage poly-contact(BC) pattern as a mask. After depositing a polysilicon(30) in the holes, a metal silicide layer(31) as a bit line and a nitride(32) as a hard mask are sequentially deposited and patterned so as to form the bit line poly-contact plug(33) and the storage poly-contact plug(35).