Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber

摘要

A system and sequential method for integrated, in-situ modification of a substrate (181) in and subsequent atomic layer deposition of a thin film onto the substrate (181) in an evacutated chamber comprising introducing at least one feed gas (130) into the chamber; generating a plasma (172) from the feed gas; exposing the substrate to ions (177) and/or radicals (176) formed by the plasma; modulating any ions; reacting the substrate with the modulated ions and/or radicals to remove any contaminants for the substate and producing a modified substrate. These steps are followed, in-situ, by performing an atomic layer deposition of a thin film onto the modified substrate in the chamber.