发明名称 |
Method for manufacturing cylindrical storage electrode of semiconductor device |
摘要 |
A method for manufacturing a cylindrical storage electrode of a semiconductor device includes forming a contact pad to be connected to an active region of a semiconductor substrate in an interlayer insulator film on the semiconductor substrate. Then, a silicon nitride layer as an etching stop layer is formed on the contact pad. Next, an insulating layer is formed on the silicon nitride layer. A portion of the surface of the silicon nitride layer is exposed by partially removing the insulating layer. Then, the exposed portion of the silicon nitride layer is removed using a wet etching process using a predetermined etchant to expose the surface of the contact pad. A conductive layer for a storage electrode is formed on the insulating layer and the surface of the exposed contact pad. Finally, a cylindrical storage electrode is completed by removing the upper portion of the conductive layer for a storage electrode, the insulating layer and the silicon nitride layer.
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申请公布号 |
US6406967(B1) |
申请公布日期 |
2002.06.18 |
申请号 |
US20000632583 |
申请日期 |
2000.08.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG DAE-HYUK;SONG CHANG-LYONG |
分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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