发明名称 Protection means for preventing power-on sequence induced latch-up
摘要 A protection device for preventing power-on sequence induced latch-up, which device is used in a power supply system having a first power supply and a second power supply wherein the voltage of the first power supply is higher than that of the second power supply. The protection device comprising: a voltage-drop circuit having an input terminal and an output terminal, the input terminal being connected to the first power supply; and inverter having an input terminal and an output terminal, the input terminal being connected to the output terminal of the voltage-drop circuit: a switching NMOS transistor with the gate connected to the output terminal of the inverter and the source connected to ground: and a variable capacitance circuit having a first capacitor and a second capacitor, the capacitance of the first capacitor being much larger than that of the second capacitor, the first terminal and the second terminal of the first capacitor being connected to the second power supply and the first terminal of the second capacitor respectively, the second terminal of the second capacitor being connected to ground, the common node of the second terminal of the first capacitor and the first terminal of the second capacitor being connected to the drain of the switching NMOS transistor, wherein the switching NMOS transistor and the variable capacitance circuit are formed on the same semiconductor substrate.
申请公布号 US6407898(B1) 申请公布日期 2002.06.18
申请号 US20000484488 申请日期 2000.01.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 WU CHAU-NENG
分类号 H01L27/02;(IPC1-7):H02H3/18 主分类号 H01L27/02
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