发明名称 Non-contact technique for using an eddy current probe for measuring the thickness of metal layers disposed on semi-conductor wafer products
摘要 A method and system for identifying thicknesses of inspection samples, such as semiconductor wafers is presented. The method and system includes a probe housing, comprising an eddy current sense coil and a linear motion controller, and a computer that controls the linear motion controller and the eddy current sense coil. The computer may be configured to identify a thickness of the inspection sample by a method comprising the generation of a natural intercepting curve based on resistance and reactance measurements of at least two data points. Then, a plurality of corresponding resistance and reactance measurements of a location on the inspection sample is obtained with the eddy current sensor, where the eddy current sensor makes a first measurement at a first distance from the inspection sample, and makes each of the remaining plurality of measurements at a distance that is incrementally further away from the inspection surface. Next, an inspection sample curve is generated based on the plurality of corresponding resistance and reactance measurements obtained from the inspection sample. An intersection point between the natural intercepting curve and the inspection sample curve is also generated. A vector impedance for each of the at least two data points, and the intersection point, is calculated to identify a closest two data points that the intersection point is positioned. Then, the thickness of the identified location of the inspection sample is calculated by performing an interpolation between the closest two data points.
申请公布号 US6407546(B1) 申请公布日期 2002.06.18
申请号 US20000545119 申请日期 2000.04.07
申请人 LE CUONG DUY;NGO ANH THE 发明人 LE CUONG DUY;NGO ANH THE
分类号 G01B7/06;G01R33/12;(IPC1-7):G01B7/06 主分类号 G01B7/06
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