发明名称 |
Liquid etch endpoint detection and process metrology |
摘要 |
A semiconductor process endpoint detection system uses a relatively wide wavelength range of light to reflect off a semiconductor wafer being processed. Relatively narrow wavelength ranges can be monitored within this wide reflected wavelength range in order to produce an endpoint of the process. An indication can be produced which is a function of detected light intensities at multiple wavelength ranges. These indications aid in the determination of an endpoint of a process.
|
申请公布号 |
US6406641(B1) |
申请公布日期 |
2002.06.18 |
申请号 |
US19970877537 |
申请日期 |
1997.06.17 |
申请人 |
LUXTRON CORPORATION |
发明人 |
GOLZARIAN REZA |
分类号 |
G01B11/06;H01L21/306;H01L21/66;(IPC1-7):H01L21/302 |
主分类号 |
G01B11/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|