发明名称 |
Bias circuit and method of fabricating semiconductor device |
摘要 |
The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collector, and at least one Schottky diode connected to the base of the first bipolar transistor, and the at least one Schottky diode is provided for supplying a base potential for suppressing a collector current of the first bipolar transistor from changing in accordance with temperature change.
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申请公布号 |
US6407617(B1) |
申请公布日期 |
2002.06.18 |
申请号 |
US20000714131 |
申请日期 |
2000.11.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YANAGIHARA MANABU;TANAKA TSUYOSHI;SUGIMURA AKIHISA |
分类号 |
H01L21/328;G05F3/20;H03F1/30;(IPC1-7):H03K3/01 |
主分类号 |
H01L21/328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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