发明名称 |
Semiconductor device having reduced line width variations between tightly spaced and isolated features |
摘要 |
A patterned film structure within a semiconductor device includes a pattern formed within a hardmask film, and a pattern formed within an underlying semiconductor or metal film beneath the hardmask film. The etch bias of both isolated and nested features formed within the patterned structure, is substantially the same with respect to a masking film formed over the hardmask film.
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申请公布号 |
US6406999(B1) |
申请公布日期 |
2002.06.18 |
申请号 |
US19990397459 |
申请日期 |
1999.09.16 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
ESRY THOMAS CRAIG;LAYADI NACE;LUQUE SYLVIA MARCI;MOLLOY SIMON JOHN;PITA MARIO |
分类号 |
H01L21/311;H01L21/3213;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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