发明名称 |
Laser fault correction of semiconductor devices |
摘要 |
An E-beam generator and detector arrangement sends an electron beam through a series of differentially evacuated vacuum chambers of small size to detect faulty circuitry in individual semiconductor devices. The vacuum chambers are open to one end and are sealed by the semiconductor device without contacting the vacuum chambers. A laser generator is operated by a control system with the E-beam generator and detector arrangement to provide a laser beam in a known physical relationship to the electron beam to correct detected faulty circuitry in the semiconductor devices. The E-beam generator and detector arrangement confirms the correction without further handling of the semiconductor device.
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申请公布号 |
US6407559(B1) |
申请公布日期 |
2002.06.18 |
申请号 |
US20000604865 |
申请日期 |
2000.06.28 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
PASCH NICHOLAS F. |
分类号 |
G01Q30/02;G01Q30/16;G01R31/307;H01L23/525;(IPC1-7):G01R31/305 |
主分类号 |
G01Q30/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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