发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
To read data stored on a memory cell transistor with a floating gate, a flash memory uses: a single-gate reference transistor; a differential sense amplifier; and a gate voltage generator for generating a gate voltage for the reference transistor. The gate voltage generator includes: a dummy cell transistor, which has the same structure as the memory cell transistor and has been turned ON; a current mirror for creating a current proportional to a drain current of the dummy cell transistor; an NMOS transistor for generating a gate voltage for the reference transistor in accordance with the current created by the current mirror; and a voltage hold circuit for holding the gate voltage generated. Even if temperature or fabricating process conditions have changed, this construction ensures accurate and high-speed read operation.
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申请公布号 |
US6407946(B2) |
申请公布日期 |
2002.06.18 |
申请号 |
US20000731005 |
申请日期 |
2000.12.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MARUYAMA TAKAFUMI;KOJIMA MAKOTO |
分类号 |
G11C16/28;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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