| 摘要 |
An X-ray projection exposure apparatus capable of overlaying a desirable very fine pattern on a circuit pattern formed on a wafer in high precision to expose the very fine pattern is provided. This X-ray projection exposure apparatus is comprised of: an X-ray source; an X-ray illuminating optical system for irradiating X-rays generated from the X-ray source onto a mask having a certain pattern; a mask stage for holding the mask; an X-ray projecting optical system 1 for receiving X-rays derived from the mask to project an image of the pattern onto a wafer on which a resist has been coated; a wafer stage 5 for holding the wafer 4; and a mark position detecting system 6 for detecting a position of a mark 4a which is formed on the wafer 4. Note that a center 36 of an exposure image field of the X-ray projecting optical system 1 is located at a position separated from a center axis 1a of this X-ray projecting optical system 1. Also, a center axis 6a of a mark position detecting system 6 is located on the side of the exposure image field with respect to a center axis 1a of the X-ray projecting optical system 1. <IMAGE> |
