METHOD FOR FABRICATING FLASH MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a flash memory device is provided to prevent WSix from being partially oxidized, by forming a doped amorphous silicon layer or passivation layer of amorphous silicon on a semiconductor substrate having a control gate composed of doped polysilicon and WSix and by etching a predetermined portion of the passivation layer to form a contact hole. CONSTITUTION: The control gate(4) is formed on the semiconductor substrate(1) having a predetermined structure. A passivation layer(5) is formed on the control gate. An anti-reflective coating(ARC)(6) is formed on the passivation layer. An insulation layer(7) is formed on the ARC. The contact hole(8) is formed to expose a predetermined portion of the passivation layer. The first metal passivation layer(9) is formed on the resultant structure including the contact hole. A contact plug(10) is formed to fill the contact hole. The second metal passivation layer(11) is formed on the contact plug. A metal line(12) is formed on the resultant structure including the ohmic contact hole.