发明名称 |
INDUCTANCE WHICH CAN BE INTEGRATED MONOLITHICALLY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an inductance which can be integrated monolithically and can be utilized profitably especially in an MRAM mechanism. SOLUTION: This inductance can be integrated monolithically and comprises continuous layers in which conduction layers (P1-P4) and insulation layers (I1-I3) are laminated upward and downward alternately. This constitution of the conduction layers (P1-P4) has a coil-like structure in which a center region (M) being able to provide GMR materials (WM, TB, HM) is centered.</p> |
申请公布号 |
JP2002170378(A) |
申请公布日期 |
2002.06.14 |
申请号 |
JP20010249665 |
申请日期 |
2001.08.20 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BENEDIX ALEXANDER;BRAUN GEORG;FISCHER HELMUT;KLEHN BERND;KUHNE SEBASTIAN |
分类号 |
G11C11/14;G11C11/15;G11C11/16;H01F17/00;H01F17/02;H01F27/245;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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