发明名称 INDUCTANCE WHICH CAN BE INTEGRATED MONOLITHICALLY
摘要 <p>PROBLEM TO BE SOLVED: To provide an inductance which can be integrated monolithically and can be utilized profitably especially in an MRAM mechanism. SOLUTION: This inductance can be integrated monolithically and comprises continuous layers in which conduction layers (P1-P4) and insulation layers (I1-I3) are laminated upward and downward alternately. This constitution of the conduction layers (P1-P4) has a coil-like structure in which a center region (M) being able to provide GMR materials (WM, TB, HM) is centered.</p>
申请公布号 JP2002170378(A) 申请公布日期 2002.06.14
申请号 JP20010249665 申请日期 2001.08.20
申请人 INFINEON TECHNOLOGIES AG 发明人 BENEDIX ALEXANDER;BRAUN GEORG;FISCHER HELMUT;KLEHN BERND;KUHNE SEBASTIAN
分类号 G11C11/14;G11C11/15;G11C11/16;H01F17/00;H01F17/02;H01F27/245;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/14
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