Integrated memory semiconductor device incorporating quantum pits with a means for polarizing the charging and discharging of charges at these quantum pits

摘要

An integrated memory semiconductor device comprises at least one integrated structure of point-memory, incorporating a semiconducting zone of quantum pits (6) buried in the substrate (1) of the structure and arranged under the insulated grid (7) of a transistor, and a polarization means (16) for polarizing the structure in a manner that allows the charging or discharging of charges in the quantum pits or from the quantum pits.