| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-etching processing apparatus which prevents an operating efficiency reduction resulted from a dummy discharge before etching processing and which intends stabilization of etching characteristics by means of the dummy discharge. SOLUTION: The plasma-etching processing apparatus consists of a vacuum- processing chamber 200, an upper antenna electrode 211 located inside the vacuum-processing chamber 200 and a lower electrode 230 placed on an in- process substrate, and a control panel 401 which sets an etching condition in the vacuum-processing chamber 200 to control the etching processing. The plasma-etching processing apparatus selects either a normal processing which produces a plasma charge by supplying a high frequency wave power, then carries out an etching-processing of the in-process substrate, or a dummy processing which processes the others except the in-process substrate by producing the plasma charge. The control panel 401 measures a passed time from the last plasma discharge, the dummy processing is carried out before the normal processing only when the passed time is a predetermined time or more, and the vacuum-processing chamber is heated up to a predetermined temperature. |
