发明名称 SEMICONDUCTOR MICRO RELAY AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor micro relay of vertical open/close type together with its manufacturing method, which is manufactured in a relatively simple manufacturing process with no constraint on a structure design. SOLUTION: There are provided a semiconductor substrate 1, an insulating layer 7 formed on it, a fixed conductive part 21 formed by plating on the insulating layer 7, a beam-like movable conductive part 31 so formed by plating as to face the fixed conductive part 21 with an interval while electrically separated, a support part 51 which rises above the fixed conductive part 21 to connect to a part of the movable conductive part 31 so that the movable conductive part 31 is physically supported on the substrate 1, and an acting part 8 which, formed on the movable conductive part 31, deflects a part of it in the direction vertical to the surface of the semiconductor substrate 1 so as to be electrically conductive to the fixed conductive part 21.
申请公布号 JP2002170470(A) 申请公布日期 2002.06.14
申请号 JP20000361975 申请日期 2000.11.28
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 YOSHIDA HITOSHI
分类号 B81B3/00;B81C1/00;H01H37/14;H01H37/32;H01H37/52;H01H57/00;H01H59/00;H01L41/09;H01L41/22;H01L41/313 主分类号 B81B3/00
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