SEMICONDUCTOR DEVICE AND MIS TYPE SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor which is constructed so as to surely inhibit phenomena where impurities from an electrode adjacent to an extreme- thin dielectric film affect an electrode and substrate on the opposite side through the electrode, without causing damage to a characteristic of a transistor. SOLUTION: The semiconductor includes a silicon oxide-nitride film whose main components are silicon nitride and silicon oxide, and the dielectric constant of the silicon oxide-nitride film is larger than the dielectric constant which is the simple average of dielectric constants of the silicon oxide and silicon nitride by the rate of composition. Such a semiconductor provides an effect capable of inhibiting exactly the phenomena which impurities from an electrode adjacent to an extreme-thin dielectric film affect an electrode and substrate on the opposite side through the electrode.