发明名称 SEMICONDUCTOR MEMORY AND TEST DEVICE FOR SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To enable to evaluate simultaneously voltage dependency of a semiconductor circuit of N pieces with a single power source, in a flash memory. SOLUTION: Memory chips 1-1, 1-2,..., 1-n incorporate voltage conversion sections 5-1, 5-2,..., 5-n respectively. When single power source voltage VDD 0 is applied from the outside, as the voltage conversion sections 5-1 to 5-n generates voltages levels VDD 1, VDD 2,..., VDD n and supply them to a self- memory core 4, evaluation of power source voltage dependency of semiconductor circuits of N pieces can be performed simultaneously with signal power source voltage.</p>
申请公布号 JP2002170400(A) 申请公布日期 2002.06.14
申请号 JP20000366428 申请日期 2000.12.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUGIMOTO EI
分类号 G01R31/28;G11C16/02;G11C16/06;G11C29/00;G11C29/34;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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