摘要 |
<p>PROBLEM TO BE SOLVED: To enable to evaluate simultaneously voltage dependency of a semiconductor circuit of N pieces with a single power source, in a flash memory. SOLUTION: Memory chips 1-1, 1-2,..., 1-n incorporate voltage conversion sections 5-1, 5-2,..., 5-n respectively. When single power source voltage VDD 0 is applied from the outside, as the voltage conversion sections 5-1 to 5-n generates voltages levels VDD 1, VDD 2,..., VDD n and supply them to a self- memory core 4, evaluation of power source voltage dependency of semiconductor circuits of N pieces can be performed simultaneously with signal power source voltage.</p> |