| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for controlling the impurity concentration of a compound semiconductor crystal and an optical semiconductor device in which formation of a p+ type region due to interstitial impurities is prevented at least on the surface of an element forming region. SOLUTION: Following to heat treatment for controlling the hole density in a compound semiconductor crystal 2, impurities substitute for the holes and the compound semiconductor crystal 2 is doped with impurities and the surface thereof is removed. Subsequently, interstitial impurities are collected on the surface by reheating and a high impurity density layer 4 on the surface is removed.
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