| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can obtain larger sizes of ships without changing a basic layout for every substrate, and to provide the manufacturing method of the silicon carbide semiconductor device. SOLUTION: A silicon carbide semiconductor device is constituted in a structure that guard rings 32 are formed every unit in the surface layer of a substrate 1, and a Schottoky electrode 31 is formed on each of the regions encircled with the guard rings 32. An insulating layer 33 is formed on the side of the surface of the substrate 1, and contact holes 34 are formed in such a way as to open the upper parts of the central parts of the electrodes 31 only in an acceptable units 10. Moreover, a surface electrode 35 is formed on the side of the surface of the electrode 1, the electrodes 31 and the electrode 36 are connected with each other via lead-out parts 35 in the acceptable units 10, and the electrode 31 and the electrode 36 are insulated from each other in the defective unit 20. |
