| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory of fast low-voltage ballistic program, ultra-short channel, ultra-high integration level, and dual bit multi-level. SOLUTION: A cell structure is realized by (i) providing a side wall control gate on the laminated film of oxide film, nitride film, oxide film (ONO) on both sides of a ward gate, and (ii) forming a control gate and a bit impurity film by self-alignment so that the control gate and the bit impurity film are shared between adjoining memory cells due to high integration. The process comprises, as main components, 1) a process for manufacturing a removable side wall for manufacturing the ultra-short channel and the side wall control gate with or without a step structure, and 2) the formation of the control gate, by self-alignment, on a storage nitride film and the impurity film. |
