| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma treatment system, which can achieve quick and uniform treatment without causing damages to a substrate by preventing partial heating of the substrate. SOLUTION: Since a retaining stage 20 is maintained to be in a constant temperature range by a cooling apparatus 80, the temperature rise of a build up substrate W can be prevented. Furthermore, since the periphery of the build up substrate W is pressed by the self weight of a mask member 91 and is in close contact with an upper surface 20a of the retaining stage 20, plasma can be prevented from protruding in the gap between a lower surface of the build-up substrate W and the upper surface 20a of the retaining stage 20, and the build-up substrate W can be prevented from partial heating. Thereby, the plasma having comparatively high density is formed, by increasing RF power of a high-frequency wave impressing apparatus 70, and a surface of the build-up substrate W can be treated comparatively quickly. |
