| 摘要 |
PROBLEM TO BE SOLVED: To form a fine pattern of an organic material film in an easy process and reduce the fringing capacitance of the gate electrode of a field effect transistor using a selective dry recess etching to improve the operating speed of a semiconductor device. SOLUTION: The field effect transistor is manufactured by comprising a step of forming a photo resist 14 on a partial region on a substrate 1, a step of forming an organic material film 11 covering the photo resist 14 on the substrate 1 by the plasma CVD, a step of forming an insulation film 12 covering the organic material film 11, a step of removing the photo resist 14 from the substrate 11 together with the organic material film 11 and the insulation film 12 formed on the photo resist 14 to form an opening 11 into the organic material film 11 and the insulation film 12, a step of forming a gate electrode 9 in the opening 11a, and a step of forming an Ohmic electrode 8 near the gate electrode 9.
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