| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition having excellent resolution particularly for the manufacture of semiconductor devices or the like, a resist composition excellent in not only high resolution but reproducibility of line width for an isolated line, and a resist composition for electron beams or X-rays having not only high resolution but high sensitivity and good profile. SOLUTION: The positive resist composition contains a polymer compound having fluoro-aliphatic groups in the side chains derived from fluoro-aliphatic compounds prepared by a telomerization or oligomerization method. The chemically amplified positive resist composition for electron beams or X-rays contains an alkali-soluble resin having >3,000 and <=300,000 weight average mol.wt. and a specified structure or a resin which is decomposed by the effect of acid to increase the solubility with an alkali developer. |
