| 摘要 |
PROBLEM TO BE SOLVED: To manufacture easily and in a simple process nitride based III-V compound semiconductor substrates on which nitride based III-V compound semiconductor layers exhibiting a low defect density and a high quality can be grown, and to manufacture high-performance and long-life semiconductor devices by using them. SOLUTION: A nitride based III-V compound semiconductor mixed crystal layer such as an n-type AlGaN layer 23 is grown on a substrate such as a (c) surface sapphire substrate 21 and is patterned to form a seed crystal. By using the seed crystal, a nitride based III-V compound semiconductor layer such as an n-type GaN layer 24 is grown in a lateral direction to manufacture a nitride based III-V compound semiconductor substrate such as an n-type GaN substrate. By using the nitride based III-V compound semiconductor substrate and by growing a nitride based III-V compound semiconductor layer on it, a semiconductor device such as a semiconductor laser is manufactured. |
