SEMICONDUCTOR PRESSURE SENSOR

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor pressure sensor utilizing a piezoelectric resistance effect which can be used stably at a high temperature and which can attain a high reliability against aging. SOLUTION: An i-Ga1-z1Alz1N layer 16 and a p-GaN piezoelectric resistance layer 17 are grown on a GaN substrate 15'. The p-GaN layer 17 is etched to form a piezoelectric resistance 18. Then an SiN insulating film 19 is formed over the hole surface and the part as the piezoelectric resistance 18 is opened, after which an electrode 20 consisting of Ni/Au is formed. An SiN film 21 is formed over the whole back surface of the GaN substrate 15' by P-CVD method. The SiN film 21 and the GaN substrate 15' are etched by selective etching down to expose the i-Ga1-z1Alz1N layer 16.