| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image sensing device which is immune to the alignment or ion implanting angle and capable of reading signals at a high speed. SOLUTION: The solid state image sensing device comprises a plurality of vertical charge transfer lines 2 arranged at pitches A in a horizontal direction in photoelectric conversion regions, and at pitches B narrower than the pitch A in regions for inputting signals to horizontal charge transfer lines 17, 18,..., 19 for receiving signals from the vertical charge transfer lines. The horizontal charge transfer lines 17, 18,..., 19 and the read amplifiers 31a, 31b,..., 31c are disposed every block, in photoelectric conversion blocks 11, 12,..., 13 into which the photoelectric conversion regions are divided. Each read amplifier is disposed at a region ensured by the pitch change of the vertical charge transfer line so as to hold a mutually translated positional relation in the same shape.
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