| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor whose reliability is improved, by preventing peeling of an emitter layer, and its manufacturing method. SOLUTION: The manufacturing method comprises a process in which a first etching is carried out to the middle of the collector layer with a first photoresist formed at a predetermined position on the emitter layer a mask, and a process in which a second etching is carried out on the exposed collector layer with each sidewall of a base layer and collector layer exposed at least by the first etching and a second photoresist formed so as to cover a part of a surface of the collector leading to the sidewall as a mask.
|
