| 摘要 |
PROBLEM TO BE SOLVED: To suppress fluctuation in a reproducing output waveform by applying a magnetic domain control field to a spin valve type very large magnetoresistive layer to set a free magnetic layer as a signal magnetic domain while a constant dielectric breakdown withstand pressure is secured to maintain electric reliability in a spin valve type very large magnetoresistive head. SOLUTION: A spin valve type very large magnetoresistive laminate layer D1 having a trapezoidal sectional shape is formed by laminating an antiferromagnetic layer 1, a fixed magnetic layer 3, a free magnetic layer 4, and a nonmagnetic protective layer 5 on a lower insulating gasp layer 7. In this case, the etching amount of the lower insulating gap layer 7 is set equal to/lower than 10 nm, which is generated when a spin valve type giant magneto-resistance effect layer is formed on the laminate layer D1, and an angleθbetween the tangential line of the side face of the laminate layer D1 in the center of the free magnetic layer 4 in a film thickness direction and the center line of the free magnetic layer 4 is set equal to/higher than 45 deg.. Thus, the spin valve type very large magnetoresistive head capable of securing a constant dielectric breakdown withstand pressure, suppressing fluctuation in a reproducing output waveform and improving electric reliability and magnetic reliability is obtained. |
