| 摘要 |
PROBLEM TO BE SOLVED: To improve the sensitivity of a photo diode in a CMOS image sensor and reduce the crosstalk (leakage) of charges to adjacent pixels. SOLUTION: A p-type layer 27 having a lower impurity concentration than a substrate p+ layer 26 using a high concentration p-type semiconductor substrate (e.g. silicon substrate) is formed on the substrate p+ layer 26 with n-type photoelectric conversion regions 14 provided at upper portions of the p-type layer 27. Thus, among photons generated in the p-type layer 27, electrons diffused toward the substrate are reliably caught in the substrate p+ layer 26 and recombined to disappear.
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